Сравнение

	SCT20N120AG, Транзистор: N-MOSFET, SiC, полевой, 1,2кВ, 16А, Idm: 45А, 153Вт
Цена	4 240 ₽
Информация о производителе	—
Основные	—
вес, г	2.5
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 200В°C (TJ)
package	Tube
package / case	TO-247-3
eccn	EAR99
htsus	8541.29.0095
reach status	REACH Unaffected
supplier device package	HiP247в„ў
series	Automotive, AEC-Q101 ->
base product number	SCT20 ->
Вес и габариты	—
technology	SiCFET (Silicon Carbide)
current - continuous drain (id) @ 25в°c	20A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	20V
fet type	N-Channel
gate charge (qg) (max) @ vgs	45nC @ 20V
input capacitance (ciss) (max) @ vds	650pF @ 400V
power dissipation (max)	153W (Tc)
rds on (max) @ id, vgs	239mOhm @ 10A, 20V
vgs (max)	+25V, -10V
vgs(th) (max) @ id	3.5V @ 1mA