Сравнение

IXFK200N10P, Транзистор: N-MOSFET, полевой, 100В, 200А, 830Вт, TO264
Цена 0 3 500
Информация о производителе
Основные
Вес и габариты
вес, г 10
moisture sensitivity level (msl) 1 (Unlimited)
mounting type Through Hole
operating temperature -55В°C ~ 175В°C (TJ)
package Bulk
package / case TO-264-3, TO-264AA
rohs status ROHS3 Compliant
eccn EAR99
htsus 8541.29.0095
reach status REACH Unaffected
supplier device package TO-264AA (IXFK)
california prop 65 Warning Information
series HiPerFETв„ў, PolarP2в„ў ->
technology MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c 200A (Tc)
drain to source voltage (vdss) 100V
drive voltage (max rds on, min rds on) 10V
fet type N-Channel
gate charge (qg) (max) @ vgs 235nC @ 10V
input capacitance (ciss) (max) @ vds 7600pF @ 25V
power dissipation (max) 830W (Tc)
rds on (max) @ id, vgs 7.5mOhm @ 100A, 10V
vgs (max) В±20V
vgs(th) (max) @ id 5V @ 8mA
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