Сравнение

AS7805AT-E1 AS7805ADTR-G1 C3M0120090D, Транзистор N-MOSFET, полевой, 900В, 23А, 97Вт, TO247-3, SiC
Цена 0 0 0 2 150
Информация о производителе
Основные
number of outputs 1 1
minimum operating temperature -40В°C -40 °C -55 C
maximum operating temperature 125В°C +125 °C +150 C
output type Fixed Fixed
factory pack quantity: factory pack quantity: 1000 2500
input voltage, max: 25 V 25 V
input voltage, min: 7.5 V 7.5 V
load regulation: 20 mV 20 mV
manufacturer: Diodes Incorporated Diodes Incorporated
maximum operating temperature: +125 C +125 C
minimum operating temperature: -40 C -40 C
mounting style: Through Hole SMD/SMT
number of outputs: 1 Output 1 Output
product category: Linear Voltage Regulators Linear Voltage Regulators
product type: Linear Voltage Regulators Linear Voltage Regulators
series: AS7805 AS7805
subcategory: PMIC-Power Management ICs PMIC-Power Management ICs
packaging: Tube Reel, Cut Tape, MouseReel
output voltage 5V 5 V
output current 1A
Вес и габариты
output current: 1 A 1 A
output voltage: 5 V 5 V
output type: Fixed Fixed
output configuration Positive
input voltage max 25V
quiescent current 6mA 2.5µA
quiescent current: 6 mA 6 mA
polarity: Positive Positive
voltage dropout (max) 2V @ 1A(typ)
psrr / ripple rejection - typ 70dB(120Hz)
line regulation: 25 mV 25 mV
psrr / ripple rejection - typ: 70 dB
package / case: TO-220-3 TO-252-2
moisture sensitive: Yes
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole
package type TO-92
width 3.8mm
pin count 3
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
regulator type Low Dropout Voltage
вес, г 6.25
package / case TO-247-3
type Silicon Carbide MOSFET
factory pack quantity 30
manufacturer Cree, Inc.
mounting style Through Hole
packaging Tube
product category MOSFET
product type MOSFET
subcategory MOSFETs
configuration Single
fall time 8 ns
rise time 10 ns
number of channels 1 Channel
product Power MOSFET
technology SiC
pd - power dissipation 97 W
channel mode Enhancement
rds on - drain-source resistance 120 mOhms
transistor polarity N-Channel
vds - drain-source breakdown voltage 900 V
id - continuous drain current 23 A
typical turn-on delay time 27 ns
typical turn-off delay time 25 ns
qg - gate charge 17.3 nC
vgs th - gate-source threshold voltage 2.1 V
кол-во в упаковке 1
Меню
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