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	C3M0120090D, Транзистор N-MOSFET, полевой, 900В, 23А, 97Вт, TO247-3, SiC
Цена	2 150 ₽
Информация о производителе	—
Основные	—
вес, г	6.25
package / case	TO-247-3
type	Silicon Carbide MOSFET
minimum operating temperature	-55 C
factory pack quantity	30
manufacturer	Cree, Inc.
maximum operating temperature	+150 C
mounting style	Through Hole
packaging	Tube
product category	MOSFET
product type	MOSFET
subcategory	MOSFETs
configuration	Single
fall time	8 ns
rise time	10 ns
number of channels	1 Channel
Вес и габариты	—
product	Power MOSFET
technology	SiC
pd - power dissipation	97 W
channel mode	Enhancement
rds on - drain-source resistance	120 mOhms
transistor polarity	N-Channel
vds - drain-source breakdown voltage	900 V
id - continuous drain current	23 A
typical turn-on delay time	27 ns
typical turn-off delay time	25 ns
qg - gate charge	17.3 nC
vgs th - gate-source threshold voltage	2.1 V
кол-во в упаковке	1