Сравнение

	IXTH16N10D2, Транзистор: N-MOSFET, полевой, 100В, 16А, 830Вт, TO247-3, 940нс
Цена	3 740 ₽
Информация о производителе	—
Основные	—
вес, г	6
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
reach status	REACH Unaffected
supplier device package	TO-247 (IXTH)
california prop 65	Warning Information
Вес и габариты	—
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	16A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	0V
fet type	N-Channel
gate charge (qg) (max) @ vgs	225nC @ 5V
input capacitance (ciss) (max) @ vds	5700pF @ 25V
power dissipation (max)	830W (Tc)
rds on (max) @ id, vgs	64mOhm @ 8A, 0V
vgs (max)	В±20V
fet feature	Depletion Mode