Сравнение

AS7805ADTR-G1, Linear Voltage Regulators 1A 3-Term POS Reg Output 1A AS7805AT-E1 AS7805ADTR-G1 C3M0120100J, Транзистор N-MOSFET, полевой, 1кВ, 22А, 83Вт, D2PAK-7, C3M™,SiC
Цена 0 0 0 0 2 580
Информация о производителе
Основные
вес, г 1 2
factory pack quantity: factory pack quantity: 2500 1000 2500
input voltage, max: 25 V 25 V 25 V
input voltage, min: 7.5 V 7.5 V 7.5 V
load regulation: 20 mV 20 mV 20 mV
manufacturer: Diodes Incorporated Diodes Incorporated Diodes Incorporated
maximum operating temperature: +125 C +125 C +125 C
minimum operating temperature: -40 C -40 C -40 C
mounting style: SMD/SMT Through Hole SMD/SMT
number of outputs: 1 Output 1 Output 1 Output
product category: Linear Voltage Regulators Linear Voltage Regulators Linear Voltage Regulators
product type: Linear Voltage Regulators Linear Voltage Regulators Linear Voltage Regulators
series: AS7805 AS7805 AS7805
subcategory: PMIC-Power Management ICs PMIC-Power Management ICs PMIC-Power Management ICs
packaging: Reel, Cut Tape, MouseReel Tube Reel, Cut Tape, MouseReel
Вес и габариты
moisture sensitive: Yes Yes
output current: 1 A 1 A 1 A
output voltage: 5 V 5 V 5 V
output type: Fixed Fixed Fixed
quiescent current: 6 mA 6 mA 6 mA
polarity: Positive Positive Positive
line regulation: 25 mV 25 mV 25 mV
package / case: TO-252-2 TO-220-3 TO-252-2
number of outputs 1
minimum operating temperature -40В°C -55 C
maximum operating temperature 125В°C +150 C
output type Fixed
output voltage 5V
output current 1A
output configuration Positive
input voltage max 25V
quiescent current 6mA
voltage dropout (max) 2V @ 1A(typ)
psrr / ripple rejection - typ 70dB(120Hz)
psrr / ripple rejection - typ: 70 dB
mounting type Surface Mount
package type TO-263-7
width 9.12mm
pin count 7
series C3M
number of elements per chip 1
channel type N
transistor configuration Single
maximum drain source voltage 1000 V
maximum gate source voltage +15 V, +9 V
maximum continuous drain current 22 A
transistor material SiC
maximum gate threshold voltage 3.5V
maximum drain source resistance 170 mΩ
channel mode Enhancement
minimum gate threshold voltage 1.8V
maximum power dissipation 83 W
typical gate charge @ vgs 21.5 4/+15 V
forward diode voltage 4.8V
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