Сравнение

C3M0120100J, Транзистор N-MOSFET, полевой, 1кВ, 22А, 83Вт, D2PAK-7, C3M™,SiC
Цена 0 0 2 580
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole Surface Mount
number of outputs 1
package type TO-92 TO-263-7
minimum operating temperature -40 °C -55 C
width 3.8mm 9.12mm
pin count 3 7
maximum operating temperature +125 °C +150 C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
вес, г 2
series C3M
number of elements per chip 1
channel type N
transistor configuration Single
maximum drain source voltage 1000 V
maximum gate source voltage +15 V, +9 V
maximum continuous drain current 22 A
transistor material SiC
maximum gate threshold voltage 3.5V
maximum drain source resistance 170 mΩ
channel mode Enhancement
minimum gate threshold voltage 1.8V
maximum power dissipation 83 W
typical gate charge @ vgs 21.5 4/+15 V
forward diode voltage 4.8V
Меню
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