Сравнение

	C3M0120100J, Транзистор N-MOSFET, полевой, 1кВ, 22А, 83Вт, D2PAK-7, C3M™,SiC
Цена	2 580 ₽
Информация о производителе	—
Основные	—
вес, г	2
mounting type	Surface Mount
package type	TO-263-7
minimum operating temperature	-55 C
width	9.12mm
pin count	7
maximum operating temperature	+150 C
series	C3M
Вес и габариты	—
number of elements per chip	1
channel type	N
transistor configuration	Single
maximum drain source voltage	1000 V
maximum gate source voltage	+15 V, +9 V
maximum continuous drain current	22 A
transistor material	SiC
maximum gate threshold voltage	3.5V
maximum drain source resistance	170 mΩ
channel mode	Enhancement
minimum gate threshold voltage	1.8V
maximum power dissipation	83 W
typical gate charge @ vgs	21.5 4/+15 V
forward diode voltage	4.8V