Сравнение

	AP7383-44W5-7	C3M0065090D, SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 C3M0065090D
Цена	0 ₽	3 560 ₽
Информация о производителе	—	—
Основные	—	—
Вес и габариты	—	—
вес, г	—	4
package / case	—	TO-247-3
type	—	Silicon Carbide MOSFET
minimum operating temperature	—	-55 C
factory pack quantity	—	30
manufacturer	—	Cree, Inc.
maximum operating temperature	—	+150 C
mounting style	—	Through Hole
packaging	—	Tube
product category	—	MOSFET
product type	—	MOSFET
subcategory	—	MOSFETs
configuration	—	Single
fall time	—	25 ns
rise time	—	36 ns
number of channels	—	1 Channel
product	—	Power MOSFET
technology	—	SiC
pd - power dissipation	—	125 W
channel mode	—	Enhancement
rds on - drain-source resistance	—	90 mOhms
transistor polarity	—	N-Channel
vds - drain-source breakdown voltage	—	900 V
vgs - gate-source voltage	—	18 V, -8 V
id - continuous drain current	—	36 A
typical turn-on delay time	—	21 ns
typical turn-off delay time	—	28 ns
forward transconductance - min	—	11.6 S
qg - gate charge	—	30.4 nC
vgs th - gate-source threshold voltage	—	1.8 V