Сравнение

C3M0065090D, Транзистор МОП n-канальный, полевой, 900В, 36А, 125Вт, TO263-8
Цена 0 0 3 660
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole
number of outputs 1
package type TO-92
minimum operating temperature -40 °C -55 C
width 3.8mm
pin count 3
maximum operating temperature +125 °C +150 C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
вес, г 6.25
package / case TO-247-3
type Silicon Carbide MOSFET
factory pack quantity 30
manufacturer Cree, Inc.
mounting style Through Hole
packaging Tube
product category MOSFET
product type MOSFET
subcategory MOSFETs
configuration Single
fall time 25 ns
rise time 36 ns
number of channels 1 Channel
product Power MOSFET
technology SiC
pd - power dissipation 125 W
channel mode Enhancement
rds on - drain-source resistance 90 mOhms
transistor polarity N-Channel
vds - drain-source breakdown voltage 900 V
vgs - gate-source voltage 18 V, -8 V
id - continuous drain current 36 A
typical turn-on delay time 21 ns
typical turn-off delay time 28 ns
forward transconductance - min 11.6 S
qg - gate charge 30.4 nC
vgs th - gate-source threshold voltage 1.8 V
Меню
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