Сравнение

	$CAS120M12BM2, Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge CAS120M12BM2 Semiconductors\Discrete Semiconductors\MOSFETsSilicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes.$ CAS120M12BM2, Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge CAS120M12BM2
Цена	98 130 ₽
Информация о производителе	—
Основные	—
mounting type	Screw Mount
package type	Half Bridge
minimum operating temperature	-40 C
width	61.4mm
pin count	7
maximum operating temperature	+150 C
Вес и габариты	—
number of elements per chip	2
channel type	N
transistor configuration	Series
maximum drain source voltage	1200 V
maximum gate source voltage	-10 V, +25 V
maximum continuous drain current	193 A
transistor material	SiC
maximum gate threshold voltage	2.6V
maximum drain source resistance	30 mΩ
channel mode	Enhancement
minimum gate threshold voltage	1.8V
maximum power dissipation	925 W
typical gate charge @ vgs	378 nC 20 V
forward diode voltage	2.4V