Сравнение

SI2301BDS-T1-E3
Цена 0 190
Информация о производителе
Основные
Вес и габариты
package / case SOT-23-3
minimum operating temperature -55 C
factory pack quantity 3000
manufacturer Vishay
maximum operating temperature +150 C
mounting style SMD/SMT
packaging Cut Tape or Reel
product category MOSFET
product type MOSFET
series SI2
subcategory MOSFETs
configuration Single
fall time 20 ns
rise time 40 ns
number of channels 1 Channel
tradename TrenchFET
part # aliases SI2301BDS-E3
technology Si
pd - power dissipation 900 mW
channel mode Enhancement
rds on - drain-source resistance 100 mOhms
transistor polarity P-Channel
vds - drain-source breakdown voltage 20 V
vgs - gate-source voltage 4.5 V
id - continuous drain current 2.4 A
typical turn-on delay time 20 ns
typical turn-off delay time 30 ns
forward transconductance - min 6.5 S
qg - gate charge 10 nC
transistor type 1 P-Channel
vgs th - gate-source threshold voltage 450 mV
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