Сравнение

SIS890DN-T1-GE3, Силовой МОП-транзистор, N Канал, 100 В, 30 А, 0.0195 Ом, PowerPAK 1212, Surface Mou
Цена 0 0 300
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole
number of outputs 1
package type TO-92
minimum operating temperature -40 °C
width 3.8mm
pin count 3
maximum operating temperature +125 °C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
вес, г 0.09
factory pack quantity: factory pack quantity: 3000
manufacturer: Vishay
maximum operating temperature: +150 C
minimum operating temperature: -55 C
mounting style: SMD/SMT
product category: MOSFET
product type: MOSFET
series: SIS
subcategory: MOSFETs
packaging: Reel, Cut Tape, MouseReel
part # aliases: SIS890DN-GE3
package/case: PowerPAK-1212-8
tradename: TrenchFET
pd - power dissipation: 52 W
number of channels: 1 Channel
technology: Si
configuration: Single
channel mode: Enhancement
id - continuous drain current: 30 A
qg - gate charge: 29 nC
rds on - drain-source resistance: 19.5 mOhms
transistor polarity: N-Channel
transistor type: 1 N-Channel
vds - drain-source breakdown voltage: 100 V
vgs - gate-source voltage: -20 V, +20 V
vgs th - gate-source threshold voltage: 1.5 V
typical turn-off delay time: 16 ns
typical turn-on delay time: 10 ns
forward transconductance - min: 25 S
Меню
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