Сравнение

	SIZ340DT-T1-GE3
Цена	140 ₽
Информация о производителе	—
Основные	—
Вес и габариты	—
rds on - drain-source resistance	9.5mО© @ 15.6A,10V
transistor polarity	2 N Channel(Half Bridge)
vds - drain-source breakdown voltage	30V
vgs - gate-source voltage	2.4V @ 250uA
continuous drain current (id) @ 25в°c	30A,40A
power dissipation-max (ta=25в°c)	16.7W,31W