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	SQ4961EY-T1_GE3, MOSFET Dual P-Channel 60V AEC-Q101 Qualified
Цена	500 ₽
Информация о производителе	—
Основные	—
вес, г	0.19
package / case	SO-8
minimum operating temperature	-55 C
factory pack quantity	2500
manufacturer	Vishay
maximum operating temperature	+175 C
mounting style	SMD/SMT
packaging	Cut Tape or Reel
product category	MOSFET
product type	MOSFET
series	SQ
subcategory	MOSFETs
configuration	Dual
fall time	8 ns
rise time	13 ns
factory pack quantity: factory pack quantity:	2500
manufacturer:	Vishay
maximum operating temperature:	+175 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	SQ
subcategory:	MOSFETs
packaging:	Reel, Cut Tape, MouseReel
number of channels	2 Channel
Вес и габариты	—
package/case:	SOIC-8
tradename:	TrenchFET
tradename	TrenchFET
pd - power dissipation:	3.3 W
technology	Si
number of channels:	2 Channel
qualification:	AEC-Q101
pd - power dissipation	3.3 W
qualification	AEC-Q101
technology:	Si
configuration:	Dual
channel mode	Enhancement
continuous drain current (id) @ 25°c	4.4A(Tc)
power dissipation-max (ta=25°c)	3.3W(Tc)
rds on - drain-source resistance	70 mOhms
transistor polarity	P-Channel
vds - drain-source breakdown voltage	60 V
vgs - gate-source voltage	20 V
id - continuous drain current	4.4 A
typical turn-on delay time	11 ns
typical turn-off delay time	36 ns
forward transconductance - min	9 S
qg - gate charge	40 nC
transistor type	2 P-Channel
vgs th - gate-source threshold voltage	2.5 V
channel mode:	Enhancement
id - continuous drain current:	4.4 A
qg - gate charge:	40 nC
rds on - drain-source resistance:	70 mOhms
transistor polarity:	P-Channel
transistor type:	2 P-Channel
vds - drain-source breakdown voltage:	60 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	2.5 V
typical turn-off delay time:	36 ns
typical turn-on delay time:	11 ns
forward transconductance - min:	9 S