Сравнение

SI7414DN-T1-GE3, Силовой МОП-транзистор, N Channel, 60 В, 5.6 А, 0.021 Ом, 1212, Surface Mount
Цена 0 0 430
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole
number of outputs 1
package type TO-92
minimum operating temperature -40 °C
width 3.8mm
pin count 3 8
maximum operating temperature +125 °C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
вес, г 2
максимальная рабочая температура 150 C
packaging Tape and Reel
product category Power MOSFET
automotive No
eu rohs compliant
lead shape no lead
maximum operating temperature (°c) 150
mounting surface mount
part status active
pcb changed 8
standard package name PowerPAK 1212
supplier package PowerPAK 1212
eccn (us) ear99
maximum power dissipation (mw) 1500
minimum operating temperature (°c) -55
configuration Single Quad Drain Triple Source
package height 1.04
package length 3.05
package width 3.05
process technology TrenchFET
number of elements per chip 1
channel type N Channel
power dissipation 1.5Вт
полярность транзистора N Канал
channel mode Enhancement
maximum continuous drain current (a) 5.6
maximum drain source resistance (mohm) 25@10V
maximum drain source voltage (v) 60
maximum gate source voltage (v) ±20
typical fall time (ns) 12
typical gate charge @ 10v (nc) 16
typical gate charge @ vgs (nc) 16@10V
typical rise time (ns) 12
typical turn-off delay time (ns) 30
typical turn-on delay time (ns) 15
military No
монтаж транзистора Surface Mount
drain source on state resistance 0.021Ом
Меню
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