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	AP7383-44W5-7	SI7414DN-T1-GE3, Силовой МОП-транзистор, N Channel, 60 В, 5.6 А, 0.021 Ом, 1212, Surface Mount
Цена	0 ₽	430 ₽
Информация о производителе	—	—
Основные	—	—
Вес и габариты	—	—
вес, г	—	2
максимальная рабочая температура	—	150 C
pin count	—	8
packaging	—	Tape and Reel
product category	—	Power MOSFET
automotive	—	No
eu rohs	—	compliant
lead shape	—	no lead
maximum operating temperature (°c)	—	150
mounting	—	surface mount
part status	—	active
pcb changed	—	8
standard package name	—	PowerPAK 1212
supplier package	—	PowerPAK 1212
eccn (us)	—	ear99
maximum power dissipation (mw)	—	1500
minimum operating temperature (°c)	—	-55
configuration	—	Single Quad Drain Triple Source
package height	—	1.04
package length	—	3.05
package width	—	3.05
process technology	—	TrenchFET
number of elements per chip	—	1
channel type	—	N Channel
power dissipation	—	1.5Вт
полярность транзистора	—	N Канал
channel mode	—	Enhancement
maximum continuous drain current (a)	—	5.6
maximum drain source resistance (mohm)	—	25@10V
maximum drain source voltage (v)	—	60
maximum gate source voltage (v)	—	±20
typical fall time (ns)	—	12
typical gate charge @ 10v (nc)	—	16
typical gate charge @ vgs (nc)	—	16@10V
typical rise time (ns)	—	12
typical turn-off delay time (ns)	—	30
typical turn-on delay time (ns)	—	15
military	—	No
монтаж транзистора	—	Surface Mount
drain source on state resistance	—	0.021Ом