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	SI7149DP-T1-GE3, Силовой МОП-транзистор, P Канал, 30 В, 50 А, 0.0042 Ом, SOIC, Surface Mount
Цена	310 ₽
Информация о производителе	—
Основные	—
вес, г	0.13
package / case	PowerPAK-SO-8
minimum operating temperature	-55 C
factory pack quantity	3000
manufacturer	Vishay
maximum operating temperature	+150 C
mounting style	SMD/SMT
packaging	Cut Tape or Reel
product category	MOSFET
product type	MOSFET
series	SI7
subcategory	MOSFETs
configuration	Single
fall time	16 ns
rise time	14 ns
number of channels	1 Channel
Вес и габариты	—
tradename	TrenchFET
part # aliases	SI7149DP-GE3
technology	Si
pd - power dissipation	69 W
channel mode	Enhancement
rds on - drain-source resistance	5.2 mOhms
transistor polarity	P-Channel
vds - drain-source breakdown voltage	30 V
vgs - gate-source voltage	10 V
id - continuous drain current	50 A
typical turn-on delay time	15 ns
typical turn-off delay time	58 ns
forward transconductance - min	47 S
qg - gate charge	98 nC
transistor type	1 P-Channel
vgs th - gate-source threshold voltage	1.2 V