Сравнение

SI7137DP-T1-GE3, Силовой МОП-транзистор, P Канал, 20 В, 60 А, 0.0016 Ом, PowerPAK SO, Surface Mount
Цена 0 0 500
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole
number of outputs 1
package type TO-92
minimum operating temperature -40 °C - 55 C
width 3.8mm
pin count 3
maximum operating temperature +125 °C + 150 C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
вес, г 0.01
package / case PowerPAK-SO-8
factory pack quantity 3000
manufacturer Vishay
mounting style SMD/SMT
packaging Cut Tape or Reel
product category MOSFET
product type MOSFET
series SI7
subcategory MOSFETs
unit weight 0.017870 oz
configuration Single
fall time 72 ns
rise time 14 ns
number of channels 1 Channel
tradename TrenchFET
part # aliases SI7137DP-GE3
technology Si
pd - power dissipation 104 W
channel mode Enhancement
rds on - drain-source resistance 1.6 mOhms
transistor polarity P-Channel
vds - drain-source breakdown voltage 20 V
vgs - gate-source voltage 12 V
id - continuous drain current 60 A
typical turn-on delay time 20 ns
typical turn-off delay time 230 ns
forward transconductance - min 95 S
qg - gate charge 585 nC
transistor type 1 P-Channel
vgs th - gate-source threshold voltage 1.4 V
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