Сравнение

	AP7383-44W5-7	SI4463BDY-T1-E3, Силовой МОП-транзистор, P Канал, 20 В, 9.8 А, 0.0085 Ом, SOIC, Surface Mount
Цена	0 ₽	190 ₽
Информация о производителе	—	—
Основные	—	—
Вес и габариты	—	—
вид монтажа	—	SMD/SMT
категория продукта	—	МОП-транзистор
подкатегория	—	MOSFETs
размер фабричной упаковки	—	2500
тип продукта	—	MOSFET
торговая марка	—	Vishay / Siliconix
упаковка / блок	—	SO-8
серия	—	SI4
длина	—	4.9 mm
коммерческое обозначение	—	TrenchFET
pin count	—	8
packaging	—	Tape and Reel
product category	—	Power MOSFET
другие названия товара №	—	SI4463BDY-E3
automotive	—	No
eu rohs	—	compliant
lead shape	—	Gull-wing
maximum operating temperature (°c)	—	150
mounting	—	surface mount
part status	—	NRND
pcb changed	—	8
ppap	—	No
standard package name	—	SOP
supplier package	—	SOIC N
eccn (us)	—	ear99
maximum power dissipation (mw)	—	3000
minimum operating temperature (°c)	—	-55
configuration	—	Single Quad Drain Triple Source
process technology	—	TrenchFET
технология	—	Si
number of elements per chip	—	1
channel type	—	P
channel mode	—	Enhancement
maximum continuous drain current (a)	—	9.8
maximum drain source resistance (mohm)	—	11 10V
maximum drain source voltage (v)	—	20
maximum gate source leakage current (na)	—	100
maximum gate source voltage (v)	—	±12
maximum gate threshold voltage (v)	—	1.4
maximum idss (ua)	—	1
typical fall time (ns)	—	75
typical gate charge @ vgs (nc)	—	37 4.5V
typical rise time (ns)	—	60
typical turn-off delay time (ns)	—	115
typical turn-on delay time (ns)	—	35
operating junction temperature (°c)	—	-55 to 150
typical output capacitance (pf)	—	800
maximum continuous drain current on pcb @ tc=25°c (a)	—	13.7
maximum diode forward voltage (v)	—	1.1
maximum junction ambient thermal resistance on pcb (°c/w)	—	84
maximum positive gate source voltage (v)	—	12
maximum power dissipation on pcb @ tc=25°c (w)	—	3
maximum pulsed drain current @ tc=25°c (a)	—	50
minimum gate threshold voltage (v)	—	0.6
typical diode forward voltage (v)	—	0.7
typical gate plateau voltage (v)	—	2.1
typical gate to drain charge (nc)	—	11
typical gate to source charge (nc)	—	8.7
typical reverse recovery time (ns)	—	50