Сравнение

SI4459ADY-T1-GE3
Цена 0 0 260
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole
number of outputs 1
package type TO-92
minimum operating temperature -40 °C
width 3.8mm
pin count 3 8
maximum operating temperature +125 °C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
вес, г 0.187
packaging Tape and Reel
product category Power MOSFET
automotive No
eu rohs Compliant with Exemption
lead shape Gull-wing
maximum operating temperature (°c) 150
mounting surface mount
part status active
pcb changed 8
ppap No
standard package name SOP
supplier package SOIC N
eccn (us) ear99
maximum power dissipation (mw) 3500
minimum operating temperature (°c) -55
configuration Single Quad Drain Triple Source
process technology TrenchFET
number of elements per chip 1
channel type P
channel mode Enhancement
maximum continuous drain current (a) 29
maximum drain source resistance (mohm) 5 10V
maximum drain source voltage (v) 30
maximum gate source voltage (v) ±20
maximum gate threshold voltage (v) 2.5
typical fall time (ns) 20|40
typical gate charge @ 10v (nc) 129
typical gate charge @ vgs (nc) 129 10V|61 4.5V
typical input capacitance @ vds (pf) 6000 15V
typical rise time (ns) 16|130
typical turn-off delay time (ns) 80|60
typical turn-on delay time (ns) 16|75
rds on - drain-source resistance 5mО© @ 15A,10V
transistor polarity P Channel
vds - drain-source breakdown voltage 30V
vgs - gate-source voltage 2.5V @ 250uA
continuous drain current (id) @ 25в°c 29A(Tc)
power dissipation-max (ta=25в°c) 7.8W(Tc)
typical output capacitance (pf) 860
typical gate to drain charge (nc) 23.5
typical gate to source charge (nc) 16.5
typical reverse recovery charge (nc) 74
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