Сравнение

	AP7383-44W5-7	$SI3429EDV-T1-GE3, MOSFET -20V Vds 8V Vgs TSOP-6 Semiconductors\Discrete Semiconductors\Transistors\MOSFETSi3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.$ SI3429EDV-T1-GE3, MOSFET -20V Vds 8V Vgs TSOP-6
Цена	0 ₽	150 ₽
Информация о производителе	—	—
Основные	—	—
Вес и габариты	—	—
вес, г	—	0.02
factory pack quantity: factory pack quantity:	—	3000
manufacturer:	—	Vishay
maximum operating temperature:	—	+150 C
minimum operating temperature:	—	-55 C
mounting style:	—	SMD/SMT
product category:	—	MOSFET
product type:	—	MOSFET
series:	—	SI3
subcategory:	—	MOSFETs
packaging:	—	Reel, Cut Tape, MouseReel
package/case:	—	TSOP-6
tradename:	—	TrenchFET
pd - power dissipation:	—	4.2 W
number of channels:	—	1 Channel
technology:	—	Si
configuration:	—	Single
channel mode:	—	Enhancement
id - continuous drain current:	—	8 A
qg - gate charge:	—	118 nC
rds on - drain-source resistance:	—	38 mOhms
transistor polarity:	—	P-Channel
vds - drain-source breakdown voltage:	—	20 V
vgs - gate-source voltage:	—	-8 V, +8 V
vgs th - gate-source threshold voltage:	—	1 V