Сравнение

SI1029X-T1-GE3, Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3
Цена 0 90
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole Surface Mount
number of outputs 1
package type TO-92 SC-89-6
minimum operating temperature -40 °C -55 C
width 3.8mm 1.7mm
pin count 3 6
maximum operating temperature +125 °C +150 C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
number of elements per chip 2
channel type N, P
transistor configuration Isolated
maximum drain source voltage 60 V
maximum gate source voltage -20 V, +20 V
maximum continuous drain current 190 mA, 300 mA
transistor material Si
maximum drain source resistance 3 Ω, 8 Ω
channel mode Enhancement
minimum gate threshold voltage 1V
maximum power dissipation 250 mW
typical gate charge @ vgs 1700 nC 15 V, 750 nC 4.5 V
Меню
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