Сравнение

AS7805AT-E1 IRFR9214TRPBF, Силовой МОП-транзистор, P Канал, 250 В, 2.7 А, 3 Ом, TO-252 (DPAK), Surface Mount
Цена 0 0 330
Информация о производителе
Основные
number of outputs 1 1
minimum operating temperature -40В°C -40 °C
maximum operating temperature 125В°C +125 °C
output type Fixed Fixed
factory pack quantity: factory pack quantity: 1000
input voltage, max: 25 V
input voltage, min: 7.5 V
load regulation: 20 mV
manufacturer: Diodes Incorporated
maximum operating temperature: +125 C
minimum operating temperature: -40 C
mounting style: Through Hole
number of outputs: 1 Output
product category: Linear Voltage Regulators
product type: Linear Voltage Regulators
series: AS7805
subcategory: PMIC-Power Management ICs
packaging: Tube
output voltage 5V 5 V
output current 1A
Вес и габариты
output current: 1 A
output voltage: 5 V
output type: Fixed
output configuration Positive
input voltage max 25V
quiescent current 6mA 2.5µA
quiescent current: 6 mA
polarity: Positive
voltage dropout (max) 2V @ 1A(typ)
psrr / ripple rejection - typ 70dB(120Hz)
line regulation: 25 mV
psrr / ripple rejection - typ: 70 dB
package / case: TO-220-3
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole
package type TO-92
width 3.8mm
pin count 3 3
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
regulator type Low Dropout Voltage
вид монтажа SMD/SMT
категория продукта МОП-транзистор
подкатегория MOSFETs
размер фабричной упаковки 2000
тип продукта MOSFET
торговая марка Vishay / Siliconix
упаковка / блок TO-252-3
серия IRFR/U
длина 6.73 mm
packaging Tape and Reel
product category Power MOSFET
automotive No
eu rohs Compliant with Exemption
maximum operating temperature (°c) 150
mounting surface mount
part status active
pcb changed 2
ppap No
standard package name TO-252
supplier package DPAK
eccn (us) ear99
maximum power dissipation (mw) 50000
minimum operating temperature (°c) -55
configuration Single
технология Si
number of elements per chip 1
channel type P
tab Tab
material Si
channel mode Enhancement
maximum continuous drain current (a) 2.7
maximum drain source resistance (mohm) 3000 10V
maximum drain source voltage (v) 250
maximum gate source leakage current (na) 100
maximum gate source voltage (v) ±20
maximum gate threshold voltage (v) 4
maximum idss (ua) 100
typical fall time (ns) 17
typical gate charge @ 10v (nc) 14(Max)
typical gate charge @ vgs (nc) 14(Max)10V
typical input capacitance @ vds (pf) 220 25V
typical rise time (ns) 14
typical turn-off delay time (ns) 20
typical turn-on delay time (ns) 11
Меню
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