Сравнение

	IRF730PBF-BE3, Trans MOSFET N-CH 400V 5.5A
Цена	170 ₽
Информация о производителе	—
Основные	—
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220AB
Вес и габариты	—
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	5.5A (Tc)
drain to source voltage (vdss)	400V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	38nC @ 10V
input capacitance (ciss) (max) @ vds	700pF @ 25V
power dissipation (max)	74W (Tc)
rds on (max) @ id, vgs	1Ohm @ 3A, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA