Сравнение

	SI2301CDS-T1-GE3
Цена	12 ₽
Информация о производителе	—
Основные	—
вес, г	0.06
pin count	3
packaging	Tape and Reel
product category	Power MOSFET
automotive	No
eu rohs	compliant
lead shape	Gull-wing
maximum operating temperature (°c)	150
mounting	surface mount
part status	active
pcb changed	3
ppap	No
standard package name	SOT
supplier package	SOT-23
eccn (us)	ear99
maximum power dissipation (mw)	860
minimum operating temperature (°c)	-55
configuration	Single
process technology	TrenchFET
Вес и габариты	—
number of elements per chip	1
channel type	P
channel mode	Enhancement
maximum continuous drain current (a)	3.1
maximum drain source resistance (mohm)	112 4.5V
maximum drain source voltage (v)	20
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±8
maximum gate threshold voltage (v)	1
maximum idss (ua)	1
typical fall time (ns)	10
typical gate charge @ vgs (nc)	5.5 4.5V\|3.3 2.5V
typical input capacitance @ vds (pf)	405 10V
typical rise time (ns)	35
typical turn-off delay time (ns)	30
typical turn-on delay time (ns)	11
rds on - drain-source resistance	112mО© @ 2.8A,4.5V
transistor polarity	P Channel
vds - drain-source breakdown voltage	20V
vgs - gate-source voltage	1V @ 250uA
continuous drain current (id) @ 25в°c	3.1A
power dissipation-max (ta=25в°c)	860mW
operating junction temperature (°c)	-55 to 150
typical output capacitance (pf)	75
maximum continuous drain current on pcb @ tc=25°c (a)	2.3
maximum diode forward voltage (v)	1.2
maximum junction ambient thermal resistance on pcb (°c/w)	175
maximum positive gate source voltage (v)	8
maximum power dissipation on pcb @ tc=25°c (w)	0.86
maximum pulsed drain current @ tc=25°c (a)	10
minimum gate threshold voltage (v)	0.4
typical diode forward voltage (v)	0.8
typical gate plateau voltage (v)	1.6
typical gate to drain charge (nc)	1.3
typical gate to source charge (nc)	0.7
typical reverse recovery charge (nc)	25
typical reverse recovery time (ns)	30
typical reverse transfer capacitance @ vds (pf)	55 10V