Сравнение

	SI2307CDS-T1-GE3
Цена	48 ₽
Информация о производителе	—
Основные	—
вес, г	0.047
package / case	SOT-23-3
minimum operating temperature	-55 C
factory pack quantity	3000
manufacturer	Vishay
maximum operating temperature	+150 C
mounting style	SMD/SMT
packaging	Cut Tape or Reel
product category	MOSFET
product type	MOSFET
series	SI2
subcategory	MOSFETs
configuration	Single
fall time	7.7 ns
rise time	13 ns
number of channels	1 Channel
Вес и габариты	—
tradename	TrenchFET
part # aliases	SI2307CDS-GE3
technology	Si
pd - power dissipation	1.8 W
channel mode	Enhancement
rds on - drain-source resistance	88 mOhms
transistor polarity	P-Channel
vds - drain-source breakdown voltage	30 V
vgs - gate-source voltage	10 V
id - continuous drain current	3.5 A
typical turn-on delay time	5.5 ns
typical turn-off delay time	17 ns
forward transconductance - min	7 S
qg - gate charge	4.1 nC
transistor type	1 P-Channel
vgs th - gate-source threshold voltage	1 V