Сравнение

SI2303CDS-T1-GE3
Цена 0 43
Информация о производителе
Основные
Вес и габариты
вес, г 0.008
package / case SOT-23-3
minimum operating temperature -55 C
factory pack quantity 3000
manufacturer Vishay
maximum operating temperature +150 C
mounting style SMD/SMT
packaging Cut Tape or Reel
product category MOSFET
product type MOSFET
series SI2
subcategory MOSFETs
configuration Single
fall time 8 ns
rise time 11 ns
number of channels 1 Channel
tradename TrenchFET
part # aliases SI2303BDS-T1-E3-S
technology Si
pd - power dissipation 2.3 W
channel mode Enhancement
rds on - drain-source resistance 190 mOhms
transistor polarity P-Channel
vds - drain-source breakdown voltage 30 V
vgs - gate-source voltage 10 V
id - continuous drain current 2.7 A
typical turn-on delay time 4 ns
typical turn-off delay time 11 ns
forward transconductance - min 2 S
qg - gate charge 4 nC
transistor type 1 P-Channel
vgs th - gate-source threshold voltage 1 V
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