Сравнение

	$TK6A80E,S4X, MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS Semiconductors\Discrete Semiconductors\Transistors\MOSFETπ-MOS VIII MOSFETsToshiba -MOS VIII MOSFETs are 10V Gate Drive, single N-channel devices, based on the Toshiba eighth generation planar semiconductor process, which combines high levels of cell integration with optimised cell design. The technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low R DS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through hole form factor, and in a surface mounted DPAK package.$ TK6A80E,S4X, MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
Цена	570 ₽
Информация о производителе	—
Основные	—
вес, г	2
factory pack quantity: factory pack quantity:	50
manufacturer:	Toshiba
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	Through Hole
product category:	MOSFET
product type:	MOSFET
series:	TK6A80E
subcategory:	MOSFETs
packaging:	Tube
Вес и габариты	—
package/case:	TO-220-3
tradename:	MOSVIII
pd - power dissipation:	45 W
number of channels:	1 Channel
technology:	Si
configuration:	Single
channel mode:	Enhancement
id - continuous drain current:	6 A
qg - gate charge:	32 nC
rds on - drain-source resistance:	1.35 Ohms
transistor polarity:	N-Channel
transistor type:	1 N-Channel
vds - drain-source breakdown voltage:	800 V
vgs - gate-source voltage:	-30 V, +30 V
vgs th - gate-source threshold voltage:	4 V
typical turn-off delay time:	85 ns
typical turn-on delay time:	55 ns