Сравнение

AS7805AT-E1 AS7805ADTR-G1 TK62J60W,S1VQ
Цена 0 0 4 260
Информация о производителе
Основные
number of outputs 1
minimum operating temperature -40В°C
maximum operating temperature 125В°C
output type Fixed
factory pack quantity: factory pack quantity: 1000 2500
input voltage, max: 25 V 25 V
input voltage, min: 7.5 V 7.5 V
load regulation: 20 mV 20 mV
manufacturer: Diodes Incorporated Diodes Incorporated
maximum operating temperature: +125 C +125 C
minimum operating temperature: -40 C -40 C
mounting style: Through Hole SMD/SMT
number of outputs: 1 Output 1 Output
product category: Linear Voltage Regulators Linear Voltage Regulators
product type: Linear Voltage Regulators Linear Voltage Regulators
series: AS7805 AS7805
subcategory: PMIC-Power Management ICs PMIC-Power Management ICs
packaging: Tube Reel, Cut Tape, MouseReel
output voltage 5V
output current 1A
Вес и габариты
output current: 1 A 1 A
output voltage: 5 V 5 V
output type: Fixed Fixed
output configuration Positive
input voltage max 25V
quiescent current 6mA
quiescent current: 6 mA 6 mA
polarity: Positive Positive
voltage dropout (max) 2V @ 1A(typ)
psrr / ripple rejection - typ 70dB(120Hz)
line regulation: 25 mV 25 mV
psrr / ripple rejection - typ: 70 dB
package / case: TO-220-3 TO-252-2
moisture sensitive: Yes
moisture sensitivity level (msl) 1 (Unlimited)
mounting type Through Hole
operating temperature 150В°C (TJ)
package Tube
package / case TO-3P-3, SC-65-3
rohs status RoHS Compliant
eccn EAR99
htsus 8541.29.0095
supplier device package TO-3P(N)
pin count 3
product category Power MOSFET
series DTMOSIV ->
automotive No
eu rohs Compliant with Exemption
lead shape Through Hole
maximum operating temperature (°c) 150
mounting Through Hole
part status active
pcb changed 3
ppap No
standard package name TO-3PN
supplier package TO-3PN
base product number TC74VHCT244 ->
eccn (us) ear99
maximum power dissipation (mw) 400000
minimum operating temperature (°c) -55
configuration Single
process technology DTMOSIV
number of elements per chip 1
channel type N
technology MOSFET (Metal Oxide)
tab Tab
material Si
channel mode Enhancement
maximum continuous drain current (a) 61.8
maximum drain source resistance (mohm) 40 10V
maximum drain source voltage (v) 600
maximum gate source leakage current (na) 100
maximum gate source voltage (v) ±30
maximum gate threshold voltage (v) 3.7
maximum idss (ua) 10
typical fall time (ns) 15
typical gate charge @ 10v (nc) 180
typical gate charge @ vgs (nc) 180 10V
typical input capacitance @ vds (pf) 6500 300V
typical rise time (ns) 58
current - continuous drain (id) @ 25в°c 61.8A (Ta)
drain to source voltage (vdss) 600V
drive voltage (max rds on, min rds on) 10V
fet type N-Channel
gate charge (qg) (max) @ vgs 180nC @ 10V
input capacitance (ciss) (max) @ vds 6500pF @ 300V
power dissipation (max) 400W (Tc)
rds on (max) @ id, vgs 38mOhm @ 30.9A, 10V
vgs (max) В±30V
vgs(th) (max) @ id 3.7V @ 3.1mA
fet feature Super Junction
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