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	AP7383-44W5-7	TK040N65Z,S1F
Цена	0 ₽	2 930 ₽
Информация о производителе	—	—
Основные	—	—
Вес и габариты	—	—
moisture sensitivity level (msl)	—	Not Applicable
mounting type	—	Through Hole
operating temperature	—	150В°C
package	—	Tube
package / case	—	TO-247-3
rohs status	—	RoHS Compliant
eccn	—	EAR99
htsus	—	8541.29.0095
supplier device package	—	TO-247
base product number	—	TK32 ->
factory pack quantity: factory pack quantity:	—	30
manufacturer:	—	Toshiba
maximum operating temperature:	—	+150 C
minimum operating temperature:	—	-55 C
mounting style:	—	Through Hole
product category:	—	MOSFET
product type:	—	MOSFET
series:	—	TK040N65Z
subcategory:	—	MOSFETs
packaging:	—	Tube
package/case:	—	TO-247-3
tradename:	—	DTMOSVI
pd - power dissipation:	—	360 W
technology	—	MOSFET (Metal Oxide)
number of channels:	—	1 Channel
technology:	—	Si
configuration:	—	Single
current - continuous drain (id) @ 25в°c	—	57A (Ta)
drain to source voltage (vdss)	—	650V
drive voltage (max rds on, min rds on)	—	10V
fet type	—	N-Channel
gate charge (qg) (max) @ vgs	—	105nC @ 10V
input capacitance (ciss) (max) @ vds	—	6250pF @ 300V
power dissipation (max)	—	360W (Tc)
rds on (max) @ id, vgs	—	40mOhm @ 28.5A, 10V
vgs (max)	—	В±30V
vgs(th) (max) @ id	—	4V @ 2.85mA
channel mode:	—	Enhancement
id - continuous drain current:	—	57 A
qg - gate charge:	—	105 nC
rds on - drain-source resistance:	—	40 mOhms
transistor polarity:	—	N-Channel
transistor type:	—	1 N-Channel
vds - drain-source breakdown voltage:	—	650 V
vgs - gate-source voltage:	—	-30 V, +30 V
vgs th - gate-source threshold voltage:	—	3 V
typical turn-off delay time:	—	170 ns
typical turn-on delay time:	—	120 ns