Сравнение

	$SSM6L09FUTE85LF, MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V Semiconductors\Discrete Semiconductors\Transistors\MOSFETπ-MOS VI MOSFETs Toshiba -MOS VI MOSFETs are Low Voltage Gate Drive devices, offered in both P-channel and N-channel polarity, and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The -MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. The -MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.$ SSM6L09FUTE85LF, MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
Цена	150 ₽
Информация о производителе	—
Основные	—
вес, г	0.01
factory pack quantity: factory pack quantity:	3000
manufacturer:	Toshiba
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	SSM6L09
subcategory:	MOSFETs
packaging:	Reel, Cut Tape, MouseReel
Вес и габариты	—
package/case:	SOT-363-6
pd - power dissipation:	300 mW
number of channels:	2 Channel
technology:	Si
configuration:	Dual
channel mode:	Enhancement
id - continuous drain current:	400 mA, 200 mA
rds on - drain-source resistance:	4 Ohms
transistor polarity:	N-Channel, P-Channel
transistor type:	1 N-Channel, 1 P-Channel
vds - drain-source breakdown voltage:	30 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	1.8 V
typical turn-off delay time:	68 ns, 85 ns
typical turn-on delay time:	72 ns, 85 ns