Сравнение

	AP7383-44W5-7	$CSD23203W, MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA Semiconductors\Discrete Semiconductors\Transistors\MOSFETNexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.$ CSD23203W, MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA
Цена	0 ₽	170 ₽
Информация о производителе	—	—
Основные	—	—
Вес и габариты	—	—
вес, г	—	0.01
factory pack quantity: factory pack quantity:	—	3000
manufacturer:	—	Texas Instruments
maximum operating temperature:	—	+150 C
minimum operating temperature:	—	-55 C
mounting style:	—	SMD/SMT
product category:	—	MOSFET
product type:	—	MOSFET
series:	—	CSD23203W
subcategory:	—	MOSFETs
packaging:	—	Reel, Cut Tape, MouseReel
package/case:	—	DSBGA-6
tradename:	—	NexFET
pd - power dissipation:	—	750 mW
number of channels:	—	1 Channel
technology:	—	Si
configuration:	—	Single
channel mode:	—	Enhancement
id - continuous drain current:	—	3 A
qg - gate charge:	—	6.3 nC
rds on - drain-source resistance:	—	53 mOhms
transistor polarity:	—	P-Channel
transistor type:	—	1 P-Channel
vds - drain-source breakdown voltage:	—	8 V
vgs - gate-source voltage:	—	-6 V, +6 V
vgs th - gate-source threshold voltage:	—	1.1 V
typical turn-off delay time:	—	58 ns
typical turn-on delay time:	—	14 ns
forward transconductance - min:	—	14 S