Сравнение

	CSD18531Q5A, Транзистор N-MOSFET, полевой, 60В, 100А, 156Вт, VSONP8 5x6мм
Цена	430 ₽
Информация о производителе	—
Основные	—
вес, г	1
mounting type	Surface Mount
package / case	VSONP-8
length	6 mm
package type	SON
minimum operating temperature	- 55 C
width	4.9 mm
pin count	8
factory pack quantity	2500
manufacturer	Texas Instruments
maximum operating temperature	+ 150 C
mounting style	SMD/SMT
packaging	Cut Tape or Reel
product category	MOSFET
product type	MOSFET
series	CSD18531Q5A
subcategory	MOSFETs
configuration	Single
fall time	2.7 ns
rise time	7.8 ns
height	1 mm
number of channels	1 Channel
Вес и габариты	—
tradename	NexFET
number of elements per chip	1
channel type	N
technology	Si
development kit	DRV8711EVM
pd - power dissipation	156 W
transistor configuration	Single
maximum drain source voltage	60 V
maximum gate source voltage	-20 V, +20 V
maximum continuous drain current	134 A
transistor material	Si
maximum gate threshold voltage	2.3V
maximum drain source resistance	5.8 mΩ
channel mode	Enhancement
minimum gate threshold voltage	1.5V
rds on - drain-source resistance	4.6 mOhms
transistor polarity	N-Channel
vds - drain-source breakdown voltage	60 V
vgs - gate-source voltage	10 V
id - continuous drain current	100 A
maximum power dissipation	3.1 W
typical gate charge @ vgs	18 nC 4.5 V
typical turn-on delay time	4.4 ns
typical turn-off delay time	20 ns
qg - gate charge	36 nC
transistor type	1 N-Channel Power MOSFET
vgs th - gate-source threshold voltage	1.5 V