Сравнение

	SSM3K15F.LF
Цена	160 ₽
Информация о производителе	—
Основные	—
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.21.0095
supplier device package	S-Mini
series	ПЂ-MOSIV ->
base product number	2SC6010 ->
factory pack quantity: factory pack quantity:	3000
manufacturer:	Toshiba
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	SSM3K15F
subcategory:	MOSFETs
packaging:	Reel, Cut Tape
Вес и габариты	—
package/case:	TO-263-3
tradename:	MOSVI
pd - power dissipation:	200 mW
technology	MOSFET (Metal Oxide)
number of channels:	1 Channel
qualification:	AEC-Q101
technology:	Si
configuration:	Single
current - continuous drain (id) @ 25в°c	100mA (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	2.5V, 4V
fet type	N-Channel
input capacitance (ciss) (max) @ vds	7.8pF @ 3V
power dissipation (max)	200mW (Ta)
rds on (max) @ id, vgs	4Ohm @ 10mA, 4V
vgs (max)	В±20V
vgs(th) (max) @ id	1.5V @ 100ВµA
channel mode:	Enhancement
id - continuous drain current:	100 mA
rds on - drain-source resistance:	4 Ohms
transistor polarity:	N-Channel
vds - drain-source breakdown voltage:	30 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	800 mV
typical turn-off delay time:	180 ns
typical turn-on delay time:	50 ns
forward transconductance - min:	25 mS