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	AP7384-50V-A, AP7384-50V-A, 1 Low Dropout Voltage, Voltage Regulator 50mA, 5 V 3-Pin, TO-92	AP7383-44W5-7	SSM3J325F,LF
Цена	0 ₽	0 ₽	37 ₽
Информация о производителе	—	—	—
Основные	—	—	—
line regulation	0.05%/V	—	—
load regulation	0.5 V	—	—
mounting type	Through Hole	—	Surface Mount
number of outputs	1	—	—
package type	TO-92	—	—
minimum operating temperature	-40 °C	—	-55 C
width	3.8mm	—	—
pin count	3	—	—
maximum operating temperature	+125 °C	—	+150 C
output type	Fixed	—	—
output voltage	5 V	—	—
minimum input voltage	3.3 V	—	—
polarity	Positive	—	—
maximum input voltage	40 V	—	—
maximum output current	50mA	—	—
Вес и габариты	—	—	—
quiescent current	2.5µA	—	—
regulator type	Low Dropout Voltage	—	—
вес, г	—	—	0.01
moisture sensitivity level (msl)	—	—	1 (Unlimited)
operating temperature	—	—	150В°C (TJ)
package	—	—	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	—	—	SOT-346-3
rohs status	—	—	RoHS Compliant
eccn	—	—	EAR99
htsus	—	—	8541.21.0095
supplier device package	—	—	S-Mini
factory pack quantity	—	—	3000
manufacturer	—	—	Toshiba
mounting style	—	—	SMD/SMT
packaging	—	—	Cut Tape or Reel
product category	—	—	MOSFET
product type	—	—	MOSFET
series	—	—	SSM3J325
subcategory	—	—	MOSFETs
base product number	—	—	TLP2745 ->
configuration	—	—	Single
factory pack quantity: factory pack quantity:	—	—	3000
manufacturer:	—	—	Toshiba
maximum operating temperature:	—	—	+150 C
minimum operating temperature:	—	—	-55 C
mounting style:	—	—	SMD/SMT
product category:	—	—	MOSFET
product type:	—	—	MOSFET
series:	—	—	SSM3J325
subcategory:	—	—	MOSFETs
packaging:	—	—	Reel, Cut Tape, MouseReel
number of channels	—	—	1 Channel
package/case:	—	—	SOT-346-3
tradename:	—	—	U-MOSVI
tradename	—	—	U-MOSVI
pd - power dissipation:	—	—	600 mW
technology	—	—	Si
number of channels:	—	—	1 Channel
pd - power dissipation	—	—	600 mW
technology:	—	—	Si
configuration:	—	—	Single
current - continuous drain (id) @ 25в°c	—	—	2A (Ta)
drain to source voltage (vdss)	—	—	20V
drive voltage (max rds on, min rds on)	—	—	1.5V, 4.5V
fet type	—	—	P-Channel
gate charge (qg) (max) @ vgs	—	—	4.6nC @ 4.5V
input capacitance (ciss) (max) @ vds	—	—	270pF @ 10V
power dissipation (max)	—	—	600mW (Ta)
rds on (max) @ id, vgs	—	—	150mOhm @ 1A, 4.5V
vgs (max)	—	—	В±8V
rds on - drain-source resistance	—	—	311 mOhms
transistor polarity	—	—	P-Channel
vds - drain-source breakdown voltage	—	—	20 V
vgs - gate-source voltage	—	—	8 V
id - continuous drain current	—	—	2 A
forward transconductance - min	—	—	4.4 S
qg - gate charge	—	—	4.6 nC
transistor type	—	—	1 P-Channel
vgs th - gate-source threshold voltage	—	—	1 V
channel mode:	—	—	Enhancement
id - continuous drain current:	—	—	2 A
qg - gate charge:	—	—	4.6 nC
rds on - drain-source resistance:	—	—	311 mOhms
transistor polarity:	—	—	P-Channel
transistor type:	—	—	1 P-Channel
vds - drain-source breakdown voltage:	—	—	20 V
vgs - gate-source voltage:	—	—	-8 V, +8 V
vgs th - gate-source threshold voltage:	—	—	1 V
forward transconductance - min:	—	—	4.4 S