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	AS7805ADTR-G1	SI2315BDS-T1-E3, Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
Цена	0 ₽	57 ₽
Информация о производителе	—	—
Основные	—	—
factory pack quantity: factory pack quantity:	2500	—
input voltage, max:	25 V	—
input voltage, min:	7.5 V	—
load regulation:	20 mV	—
manufacturer:	Diodes Incorporated	—
maximum operating temperature:	+125 C	—
minimum operating temperature:	-40 C	—
mounting style:	SMD/SMT	—
number of outputs:	1 Output	—
product category:	Linear Voltage Regulators	—
product type:	Linear Voltage Regulators	—
series:	AS7805	—
subcategory:	PMIC-Power Management ICs	—
packaging:	Reel, Cut Tape, MouseReel	—
Вес и габариты	—	—
moisture sensitive:	Yes	—
output current:	1 A	—
output voltage:	5 V	—
output type:	Fixed	—
quiescent current:	6 mA	—
polarity:	Positive	—
line regulation:	25 mV	—
package / case:	TO-252-2	—
package / case	—	SOT-23-3
minimum operating temperature	—	-55 C
pin count	—	3
factory pack quantity	—	3000
manufacturer	—	Vishay
maximum operating temperature	—	+150 C
mounting style	—	SMD/SMT
packaging	—	Tape and Reel
product category	—	Power MOSFET
product type	—	MOSFET
series	—	SI2
subcategory	—	MOSFETs
automotive	—	No
eu rohs	—	compliant
lead shape	—	Gull-wing
maximum operating temperature (°c)	—	150
mounting	—	surface mount
part status	—	NRND
pcb changed	—	3
ppap	—	No
standard package name	—	SOT
supplier package	—	SOT-23
eccn (us)	—	ear99
maximum power dissipation (mw)	—	1190
minimum operating temperature (°c)	—	-55
configuration	—	Single
fall time	—	50 ns
rise time	—	35 ns
number of channels	—	1 Channel
process technology	—	TrenchFET
tradename	—	TrenchFET
number of elements per chip	—	1
channel type	—	P
part # aliases	—	SI2315BDS-E3
technology	—	Si
pd - power dissipation	—	0.75 W
channel mode	—	Enhancement
maximum continuous drain current (a)	—	3
maximum drain source resistance (mohm)	—	50 4.5V
maximum drain source voltage (v)	—	12
maximum gate source voltage (v)	—	±8
typical fall time (ns)	—	50
typical gate charge @ vgs (nc)	—	8 4.5V
typical input capacitance @ vds (pf)	—	715 6V
typical rise time (ns)	—	35
typical turn-off delay time (ns)	—	50
typical turn-on delay time (ns)	—	15
rds on - drain-source resistance	—	50 mOhms
transistor polarity	—	P-Channel
vds - drain-source breakdown voltage	—	12 V
vgs - gate-source voltage	—	4.5 V
id - continuous drain current	—	3 A
typical turn-on delay time	—	15 ns
typical turn-off delay time	—	50 ns
forward transconductance - min	—	7 S
qg - gate charge	—	8 nC
transistor type	—	1 P-Channel
vgs th - gate-source threshold voltage	—	450 mV