Сравнение

AS7805AT-E1 AS7805ADTR-G1 STP6NK90ZFP KBP210 (RS207), Диодный мост 2А 1000В [KBP] VFD015M21A (1,5kW 220V) Преобразователь частоты
Цена 0 0 410 120 11 150
Информация о производителе
Основные
number of outputs 1
minimum operating temperature -40В°C -55 C
maximum operating temperature 125В°C +150 C
output type Fixed
factory pack quantity: factory pack quantity: 1000 2500
input voltage, max: 25 V 25 V
input voltage, min: 7.5 V 7.5 V
load regulation: 20 mV 20 mV
manufacturer: Diodes Incorporated Diodes Incorporated
maximum operating temperature: +125 C +125 C
minimum operating temperature: -40 C -40 C
mounting style: Through Hole SMD/SMT
number of outputs: 1 Output 1 Output
product category: Linear Voltage Regulators Linear Voltage Regulators
product type: Linear Voltage Regulators Linear Voltage Regulators
series: AS7805 AS7805
subcategory: PMIC-Power Management ICs PMIC-Power Management ICs
packaging: Tube Reel, Cut Tape, MouseReel
output voltage 5V
output current 1A
Вес и габариты
output current: 1 A 1 A
output voltage: 5 V 5 V
output type: Fixed Fixed
output configuration Positive
input voltage max 25V
quiescent current 6mA
quiescent current: 6 mA 6 mA
polarity: Positive Positive
voltage dropout (max) 2V @ 1A(typ)
psrr / ripple rejection - typ 70dB(120Hz)
line regulation: 25 mV 25 mV
psrr / ripple rejection - typ: 70 dB
package / case: TO-220-3 TO-252-2
moisture sensitive: Yes
mounting type Through Hole
package type TO-220FP
width 4.6mm
pin count 3
packaging Tube
product category Power MOSFET
series MDmesh, SuperMESH
automotive No
eu rohs Compliant with Exemption
lead shape Through Hole
maximum operating temperature (°c) 150
mounting Through Hole
part status Active
pcb changed 3
standard package name TO-220
supplier package TO-220FP
eccn (us) EAR99
maximum power dissipation (mw) 30000
minimum operating temperature (°c) -55
configuration Single
package height 16.4(Max)
package length 10.4(Max)
package width 4.6(Max)
process technology SuperMESH
number of elements per chip 1
channel type N
tab Tab
transistor configuration Single
maximum drain source voltage 900 V
maximum gate source voltage -30 V, +30 V
maximum continuous drain current 5.8 A
transistor material Si
maximum gate threshold voltage 4.5V
maximum drain source resistance 2 Ω
channel mode Enhancement
maximum continuous drain current (a) 5.8
maximum drain source resistance (mohm) 2000@10V
maximum drain source voltage (v) 900
maximum gate source voltage (v) ±30
typical fall time (ns) 20
typical gate charge @ 10v (nc) 46.5
typical gate charge @ vgs (nc) 46.5@10V
typical input capacitance @ vds (pf) 1350@25V
typical rise time (ns) 45
typical turn-off delay time (ns) 20
typical turn-on delay time (ns) 17
minimum gate threshold voltage 3V
military No
maximum power dissipation 30 W
typical gate charge @ vgs 46.5 nC 10 V
вес, г 1.95
способ монтажа в отверстие
рабочая температура,с -55…+125
количество фаз 1
максимальное прямое напряжение,в 1.1
максимальное импульсное обратное напряжение,в 1200
максимальное постоянное обратное напряжение,в 1000
при iпр.,а 1
максимальный прямой(выпрямленный за полупериод) ток,а 2
максимальный обратный ток,мка 10
максимальный допустимый прямой импульсный ток,а 50
артикул VFD015M21A
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