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	AS7805AT-E1	AP7383-44W5-7	SIHB20N50E-GE3, MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
Цена	0 ₽	0 ₽	990 ₽
Информация о производителе	—	—	—
Основные	—	—	—
number of outputs	1	—	—
minimum operating temperature	-40В°C	—	—
maximum operating temperature	125В°C	—	—
output type	Fixed	—	—
factory pack quantity: factory pack quantity:	1000	—	1000
input voltage, max:	25 V	—	—
input voltage, min:	7.5 V	—	—
load regulation:	20 mV	—	—
manufacturer:	Diodes Incorporated	—	Vishay
maximum operating temperature:	+125 C	—	+150 C
minimum operating temperature:	-40 C	—	-55 C
mounting style:	Through Hole	—	SMD/SMT
number of outputs:	1 Output	—	—
product category:	Linear Voltage Regulators	—	MOSFET
product type:	Linear Voltage Regulators	—	MOSFET
series:	AS7805	—	E
subcategory:	PMIC-Power Management ICs	—	MOSFETs
packaging:	Tube	—	Bulk
output voltage	5V	—	—
output current	1A	—	—
Вес и габариты	—	—	—
output current:	1 A	—	—
output voltage:	5 V	—	—
output type:	Fixed	—	—
output configuration	Positive	—	—
input voltage max	25V	—	—
quiescent current	6mA	—	—
quiescent current:	6 mA	—	—
polarity:	Positive	—	—
voltage dropout (max)	2V @ 1A(typ)	—	—
psrr / ripple rejection - typ	70dB(120Hz)	—	—
line regulation:	25 mV	—	—
psrr / ripple rejection - typ:	70 dB	—	—
package / case:	TO-220-3	—	—
вес, г	—	—	4
moisture sensitivity level (msl)	—	—	1 (Unlimited)
mounting type	—	—	Surface Mount
operating temperature	—	—	-55В°C ~ 150В°C (TJ)
package	—	—	Bulk
package / case	—	—	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
rohs status	—	—	ROHS3 Compliant
eccn	—	—	EAR99
htsus	—	—	8541.29.0095
supplier device package	—	—	DВІPAK (TO-263)
base product number	—	—	SIHB20 ->
package/case:	—	—	TO-263-3
pd - power dissipation:	—	—	179 W
technology	—	—	MOSFET (Metal Oxide)
number of channels:	—	—	1 Channel
technology:	—	—	Si
configuration:	—	—	Single
current - continuous drain (id) @ 25в°c	—	—	19A (Tc)
drain to source voltage (vdss)	—	—	500V
drive voltage (max rds on, min rds on)	—	—	10V
fet type	—	—	N-Channel
gate charge (qg) (max) @ vgs	—	—	92nC @ 10V
input capacitance (ciss) (max) @ vds	—	—	1640pF @ 100V
power dissipation (max)	—	—	179W (Tc)
rds on (max) @ id, vgs	—	—	184mOhm @ 10A, 10V
vgs (max)	—	—	В±30V
vgs(th) (max) @ id	—	—	4V @ 250ВµA
channel mode:	—	—	Enhancement
id - continuous drain current:	—	—	19 A
qg - gate charge:	—	—	46 nC
rds on - drain-source resistance:	—	—	184 mOhms
transistor polarity:	—	—	N-Channel
vds - drain-source breakdown voltage:	—	—	550 V
vgs - gate-source voltage:	—	—	-30 V, +30 V
vgs th - gate-source threshold voltage:	—	—	4 V
typical turn-off delay time:	—	—	48 ns
typical turn-on delay time:	—	—	17 ns