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	AS7805ADTR-G1, Linear Voltage Regulators 1A 3-Term POS Reg Output 1A	AP7384-50V-A, AP7384-50V-A, 1 Low Dropout Voltage, Voltage Regulator 50mA, 5 V 3-Pin, TO-92	SIHB20N50E-GE3, MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
Цена	0 ₽	0 ₽	990 ₽
Информация о производителе	—	—	—
Основные	—	—	—
вес, г	1	—	4
factory pack quantity: factory pack quantity:	2500	—	1000
input voltage, max:	25 V	—	—
input voltage, min:	7.5 V	—	—
load regulation:	20 mV	—	—
manufacturer:	Diodes Incorporated	—	Vishay
maximum operating temperature:	+125 C	—	+150 C
minimum operating temperature:	-40 C	—	-55 C
mounting style:	SMD/SMT	—	SMD/SMT
number of outputs:	1 Output	—	—
product category:	Linear Voltage Regulators	—	MOSFET
product type:	Linear Voltage Regulators	—	MOSFET
series:	AS7805	—	E
subcategory:	PMIC-Power Management ICs	—	MOSFETs
packaging:	Reel, Cut Tape, MouseReel	—	Bulk
Вес и габариты	—	—	—
moisture sensitive:	Yes	—	—
output current:	1 A	—	—
output voltage:	5 V	—	—
output type:	Fixed	—	—
quiescent current:	6 mA	—	—
polarity:	Positive	—	—
line regulation:	25 mV	—	—
package / case:	TO-252-2	—	—
line regulation	—	0.05%/V	—
load regulation	—	0.5 V	—
mounting type	—	Through Hole	Surface Mount
number of outputs	—	1	—
package type	—	TO-92	—
minimum operating temperature	—	-40 °C	—
width	—	3.8mm	—
pin count	—	3	—
maximum operating temperature	—	+125 °C	—
output type	—	Fixed	—
output voltage	—	5 V	—
minimum input voltage	—	3.3 V	—
polarity	—	Positive	—
maximum input voltage	—	40 V	—
maximum output current	—	50mA	—
quiescent current	—	2.5µA	—
regulator type	—	Low Dropout Voltage	—
moisture sensitivity level (msl)	—	—	1 (Unlimited)
operating temperature	—	—	-55В°C ~ 150В°C (TJ)
package	—	—	Bulk
package / case	—	—	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
rohs status	—	—	ROHS3 Compliant
eccn	—	—	EAR99
htsus	—	—	8541.29.0095
supplier device package	—	—	DВІPAK (TO-263)
base product number	—	—	SIHB20 ->
package/case:	—	—	TO-263-3
pd - power dissipation:	—	—	179 W
technology	—	—	MOSFET (Metal Oxide)
number of channels:	—	—	1 Channel
technology:	—	—	Si
configuration:	—	—	Single
current - continuous drain (id) @ 25в°c	—	—	19A (Tc)
drain to source voltage (vdss)	—	—	500V
drive voltage (max rds on, min rds on)	—	—	10V
fet type	—	—	N-Channel
gate charge (qg) (max) @ vgs	—	—	92nC @ 10V
input capacitance (ciss) (max) @ vds	—	—	1640pF @ 100V
power dissipation (max)	—	—	179W (Tc)
rds on (max) @ id, vgs	—	—	184mOhm @ 10A, 10V
vgs (max)	—	—	В±30V
vgs(th) (max) @ id	—	—	4V @ 250ВµA
channel mode:	—	—	Enhancement
id - continuous drain current:	—	—	19 A
qg - gate charge:	—	—	46 nC
rds on - drain-source resistance:	—	—	184 mOhms
transistor polarity:	—	—	N-Channel
vds - drain-source breakdown voltage:	—	—	550 V
vgs - gate-source voltage:	—	—	-30 V, +30 V
vgs th - gate-source threshold voltage:	—	—	4 V
typical turn-off delay time:	—	—	48 ns
typical turn-on delay time:	—	—	17 ns