Сравнение

AP7384-33Y-13 SIA400EDJ-T1-GE3
Цена 0 0 190
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Surface Mount
number of outputs 1
максимальная рабочая температура 125 C
минимальная рабочая температура -40 C
выходной ток 50мА
линейка продукции 3.3V 50mA LDO Voltage Regulators
package type SOT-89
minimum operating temperature -40 C
width 2.6mm
pin count 3+Tab 6
maximum operating temperature +125 C
количество выводов 3вывод(-ов)
максимальное входное напряжение 40В
тип выхода фиксированный
output type Fixed
уровень чувствительности к влажности (msl) MSL 3-168 часов
output voltage 3.3 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
падение напряжения vdo 500мВ
стиль корпуса стабилизатора (ldo) SOT-89
quiescent current 2.5uA
regulator type Low Dropout Voltage
номинальное значение фиксированного выходного напряжения
packaging Tape and Reel
product category Power MOSFET
automotive No
eu rohs compliant
lead shape no lead
maximum operating temperature (°c) 150
mounting surface mount
part status active
pcb changed 6
ppap No
standard package name PowerPAK
supplier package PowerPAK SC-70 EP
eccn (us) ear99
maximum power dissipation (mw) 3500
minimum operating temperature (°c) -55
configuration Single Quad Drain
process technology TrenchFET
number of elements per chip 1
channel type N
channel mode Enhancement
maximum continuous drain current (a) 12
maximum drain source resistance (mohm) 19 4.5V
maximum drain source voltage (v) 30
maximum gate source leakage current (na) 15000
maximum gate source voltage (v) ±12
maximum gate threshold voltage (v) 1.5
maximum idss (ua) 1
typical fall time (ns) 9
typical gate charge @ 10v (nc) 24
typical gate charge @ vgs (nc) 24 10V|11.6 4.5V
typical input capacitance @ vds (pf) 1265 15V
typical rise time (ns) 23
typical turn-off delay time (ns) 26
typical turn-on delay time (ns) 10
operating junction temperature (°c) -55 to 150
typical output capacitance (pf) 132
maximum continuous drain current on pcb @ tc=25°c (a) 11
maximum diode forward voltage (v) 1.2
maximum gate resistance (ohm) 6.6
maximum junction ambient thermal resistance on pcb (°c/w) 80
maximum positive gate source voltage (v) 12
maximum power dissipation on pcb @ tc=25°c (w) 3.5
maximum pulsed drain current @ tc=25°c (a) 30
minimum gate resistance (ohm) 0.6
minimum gate threshold voltage (v) 0.6
typical diode forward voltage (v) 0.8
typical gate plateau voltage (v) 1.8
typical gate to drain charge (nc) 2.2
typical gate to source charge (nc) 2.9
typical reverse recovery charge (nc) 7
typical reverse recovery time (ns) 15
typical reverse transfer capacitance @ vds (pf) 80 15V
Меню
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