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	AS7805ADTR-G1	AP7384-50V-A, AP7384-50V-A, 1 Low Dropout Voltage, Voltage Regulator 50mA, 5 V 3-Pin, TO-92	AP7384-70V-A	STP11NM60FDFP, MOSFET N-Ch 600 Volt 11 Amp
Цена	0 ₽	0 ₽	0 ₽	1 720 ₽
Информация о производителе	—	—	—	—
Основные	—	—	—	—
factory pack quantity: factory pack quantity:	2500	—	—	1000
input voltage, max:	25 V	—	—	—
input voltage, min:	7.5 V	—	—	—
load regulation:	20 mV	—	—	—
manufacturer:	Diodes Incorporated	—	—	STMicroelectronics
maximum operating temperature:	+125 C	—	—	+150 C
minimum operating temperature:	-40 C	—	—	-65 C
mounting style:	SMD/SMT	—	—	Through Hole
number of outputs:	1 Output	—	—	—
product category:	Linear Voltage Regulators	—	—	MOSFET
product type:	Linear Voltage Regulators	—	—	MOSFET
series:	AS7805	—	—	STP11NM60FD
subcategory:	PMIC-Power Management ICs	—	—	MOSFETs
packaging:	Reel, Cut Tape, MouseReel	—	—	Tube
Вес и габариты	—	—	—	—
moisture sensitive:	Yes	—	—	—
output current:	1 A	—	—	—
output voltage:	5 V	—	—	—
output type:	Fixed	—	—	—
quiescent current:	6 mA	—	—	—
polarity:	Positive	—	—	—
line regulation:	25 mV	—	—	—
package / case:	TO-252-2	—	—	—
line regulation	—	0.05%/V	—	—
load regulation	—	0.5 V	—	—
mounting type	—	Through Hole	—	Through Hole
number of outputs	—	1	—	—
package type	—	TO-92	—	—
minimum operating temperature	—	-40 °C	—	—
width	—	3.8mm	—	—
pin count	—	3	—	3
maximum operating temperature	—	+125 °C	—	—
output type	—	Fixed	—	—
output voltage	—	5 V	—	—
minimum input voltage	—	3.3 V	—	—
polarity	—	Positive	—	—
maximum input voltage	—	40 V	—	—
maximum output current	—	50mA	—	—
quiescent current	—	2.5µA	—	—
regulator type	—	Low Dropout Voltage	—	—
вид монтажа	—	—	Through Hole	—
категория продукта	—	—	LDO регуляторы напряжения	—
количество выходов	—	—	1 Output	—
максимальная рабочая температура	—	—	+ 125 C	—
минимальная рабочая температура	—	—	40 C	—
подкатегория	—	—	PMIC - Power Management ICs	—
продукт	—	—	LDO Regulators	—
размер фабричной упаковки	—	—	2000	—
тип продукта	—	—	LDO Voltage Regulators	—
торговая марка	—	—	Diodes Incorporated	—
упаковка	—	—	Ammo Pack	—
упаковка / блок	—	—	TO-92-3	—
выходной ток	—	—	50 mA	—
нестабильность выходной нагрузки	—	—	0.5 %	—
тип выхода	—	—	Fixed	—
выходное напряжение	—	—	7 V	—
полярность	—	—	Positive	—
входное напряжение (макс.)	—	—	40 V	—
входное напряжение мин.	—	—	3.3 V	—
нестабильность выходного напряжения или тока	—	—	0.05 %/V	—
напряжение отпускания	—	—	500 mV	—
подавление пульсаций питания - типич.	—	—	60 dB	—
вес, г	—	—	—	2
moisture sensitivity level (msl)	—	—	—	1 (Unlimited)
package	—	—	—	Tube
package / case	—	—	—	TO-220-3 Full Pack
rohs status	—	—	—	ROHS3 Compliant
eccn	—	—	—	EAR99
htsus	—	—	—	8541.29.0095
reach status	—	—	—	REACH Unaffected
supplier device package	—	—	—	TO-220FP
packaging	—	—	—	Tube
product category	—	—	—	Power MOSFET
series	—	—	—	FDmeshв„ў ->
automotive	—	—	—	No
eu rohs	—	—	—	Compliant with Exemption
lead shape	—	—	—	Through Hole
maximum operating temperature (°c)	—	—	—	150
mounting	—	—	—	Through Hole
part status	—	—	—	active
pcb changed	—	—	—	3
standard package name	—	—	—	TO-220
supplier package	—	—	—	TO-220FP
base product number	—	—	—	STP11 ->
eccn (us)	—	—	—	ear99
maximum power dissipation (mw)	—	—	—	35000
minimum operating temperature (°c)	—	—	—	-65
configuration	—	—	—	Single
hts	—	—	—	8541.10.00.80
package height	—	—	—	16.4(Max)
package length	—	—	—	10.4(Max)
package width	—	—	—	4.6(Max)
package/case:	—	—	—	TO-220-3
number of elements per chip	—	—	—	1
channel type	—	—	—	N
pd - power dissipation:	—	—	—	35 W
technology	—	—	—	MOSFET (Metal Oxide)
number of channels:	—	—	—	1 Channel
other related documents	—	—	—	http://www.st.com/web/catalog/sense_power/FM100/CL
tab	—	—	—	Tab
technology:	—	—	—	Si
configuration:	—	—	—	Single
channel mode	—	—	—	Enhancement
maximum continuous drain current (a)	—	—	—	11
maximum drain source resistance (mohm)	—	—	—	450@10V
maximum drain source voltage (v)	—	—	—	600
maximum gate source voltage (v)	—	—	—	±30
typical fall time (ns)	—	—	—	15
typical gate charge @ 10v (nc)	—	—	—	28
typical gate charge @ vgs (nc)	—	—	—	28@10V
typical input capacitance @ vds (pf)	—	—	—	900@25V
typical rise time (ns)	—	—	—	16
typical turn-on delay time (ns)	—	—	—	20
current - continuous drain (id) @ 25в°c	—	—	—	11A (Tc)
drain to source voltage (vdss)	—	—	—	600V
drive voltage (max rds on, min rds on)	—	—	—	10V
fet type	—	—	—	N-Channel
gate charge (qg) (max) @ vgs	—	—	—	40nC @ 10V
input capacitance (ciss) (max) @ vds	—	—	—	900pF @ 25V
power dissipation (max)	—	—	—	35W (Tc)
rds on (max) @ id, vgs	—	—	—	450mOhm @ 5.5A, 10V
vgs (max)	—	—	—	В±30V
vgs(th) (max) @ id	—	—	—	5V @ 250ВµA
military	—	—	—	No
channel mode:	—	—	—	Enhancement
id - continuous drain current:	—	—	—	11 A
qg - gate charge:	—	—	—	40 nC
rds on - drain-source resistance:	—	—	—	450 mOhms
transistor polarity:	—	—	—	N-Channel
transistor type:	—	—	—	1 N-Channel
vds - drain-source breakdown voltage:	—	—	—	600 V
vgs - gate-source voltage:	—	—	—	-30 V, +30 V
vgs th - gate-source threshold voltage:	—	—	—	3 V
typical turn-on delay time:	—	—	—	20 ns