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	AP7383-44W5-7	STP75N3LLH6
Цена	0 ₽	500 ₽
Информация о производителе	—	—
Основные	—	—
Вес и габариты	—	—
moisture sensitivity level (msl)	—	1 (Unlimited)
mounting type	—	Through Hole
operating temperature	—	-55В°C ~ 175В°C (TJ)
package	—	Tube
package / case	—	TO-220-3
rohs status	—	ROHS3 Compliant
eccn	—	EAR99
htsus	—	8541.29.0095
reach status	—	REACH Unaffected
supplier device package	—	TO-220
pin count	—	3
packaging	—	Tube
product category	—	Power MOSFET
series	—	DeepGATEв„ў, STripFETв„ў VI ->
automotive	—	No
eu rohs	—	Compliant with Exemption
lead shape	—	Through Hole
maximum operating temperature (°c)	—	175
mounting	—	Through Hole
part status	—	Obsolete
pcb changed	—	3
ppap	—	No
standard package name	—	TO-220
supplier package	—	TO-220AB
base product number	—	STP75N ->
eccn (us)	—	ear99
maximum power dissipation (mw)	—	60000
minimum operating temperature (°c)	—	-55
configuration	—	Single
number of elements per chip	—	1
channel type	—	N
technology	—	MOSFET (Metal Oxide)
tab	—	Tab
channel mode	—	Enhancement
maximum continuous drain current (a)	—	75
maximum drain source resistance (mohm)	—	5.9 10V
maximum drain source voltage (v)	—	30
maximum gate source voltage (v)	—	±20
typical fall time (ns)	—	12
typical gate charge @ vgs (nc)	—	17 4.5V
typical input capacitance @ vds (pf)	—	1690 25V
typical rise time (ns)	—	30
typical turn-off delay time (ns)	—	37
typical turn-on delay time (ns)	—	9.5
current - continuous drain (id) @ 25в°c	—	75A (Tc)
drain to source voltage (vdss)	—	30V
drive voltage (max rds on, min rds on)	—	4.5V, 10V
fet type	—	N-Channel
gate charge (qg) (max) @ vgs	—	23.8nC @ 4.5V
input capacitance (ciss) (max) @ vds	—	2030pF @ 25V
power dissipation (max)	—	60W (Tc)
rds on (max) @ id, vgs	—	5.9mOhm @ 37.5A, 10V
vgs (max)	—	В±20V
vgs(th) (max) @ id	—	2.5V @ 250ВµA