Сравнение

	SI4403CDY-T1-GE3, Силовой МОП-транзистор, P Канал, 20 В, 13.4 А, 0.0125 Ом, SOIC, Surface Mount
Цена	180 ₽
Информация о производителе	—
Основные	—
вес, г	0.5
package / case	SO-8
length	4.9 mm
minimum operating temperature	- 55 C
width	3.9 mm
factory pack quantity	2500
manufacturer	Vishay
maximum operating temperature	+ 150 C
mounting style	SMD/SMT
packaging	Cut Tape or Reel
product category	MOSFET
product type	MOSFET
series	SI4
subcategory	MOSFETs
unit weight	0.017870 oz
configuration	Single
fall time	40 ns
rise time	16 ns
height	1.75 mm
number of channels	1 Channel
Вес и габариты	—
tradename	TrenchFET
technology	Si
pd - power dissipation	5 W
channel mode	Enhancement
rds on - drain-source resistance	15.5 mOhms
transistor polarity	P-Channel
vds - drain-source breakdown voltage	20 V
vgs - gate-source voltage	4.5 V
id - continuous drain current	13.4 A
typical turn-on delay time	14 ns
typical turn-off delay time	101 ns
forward transconductance - min	40 S
qg - gate charge	60 nC
transistor type	1 P-Channel
vgs th - gate-source threshold voltage	400 mV