Сравнение

APTGT50TL601G, IGBT Modules DOR CC8047
Цена 0 0 16 700
Информация о производителе
Основные
line regulation 0.05%/V
load regulation 0.5 V
mounting type Through Hole Chassis Mount
number of outputs 1
package type TO-92
minimum operating temperature -40 °C
width 3.8mm
pin count 3
maximum operating temperature +125 °C
output type Fixed
output voltage 5 V
minimum input voltage 3.3 V
polarity Positive
maximum input voltage 40 V
maximum output current 50mA
Вес и габариты
quiescent current 2.5µA
regulator type Low Dropout Voltage
вес, г 80
moisture sensitivity level (msl) 1 (Unlimited)
operating temperature -40В°C ~ 175В°C (TJ)
package Bulk
package / case SP1
rohs status RoHS Compliant
eccn EAR99
htsus 8541.29.0095
reach status REACH Unaffected
supplier device package SP1
base product number APTGT50 ->
configuration Three Level Inverter
factory pack quantity: factory pack quantity: 1
manufacturer: Microchip
maximum operating temperature: +100 C
minimum operating temperature: -40 C
mounting style: Chassis Mount
product category: IGBT Modules
product type: IGBT Modules
product: IGBT Silicon Modules
subcategory: IGBTs
packaging: Tube
package/case: SP1-12
input Standard
pd - power dissipation: 176 W
technology: Si
current - collector (ic) (max) 80A
igbt type Trench Field Stop
power - max 176W
vce(on) (max) @ vge, ic 1.9V @ 15V, 50A
voltage - collector emitter breakdown (max) 600V
current - collector cutoff (max) 250ВµA
input capacitance (cies) @ vce 3.15nF @ 25V
ntc thermistor No
collector- emitter voltage vceo max: 600 V
collector-emitter saturation voltage: 1.5 V
continuous collector current at 25 c: 80 A
gate-emitter leakage current: 600 nA
maximum gate emitter voltage: 20 V
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