| Основные | |
| вес, г | 0.06 |
| package / case | SOT-23-3 |
| minimum operating temperature | -55 C |
| pin count | 3 |
| factory pack quantity | 3000 |
| manufacturer | Vishay |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Tape and Reel |
| product category | Power MOSFET |
| product type | MOSFET |
| series | 2N7002E |
| subcategory | MOSFETs |
| automotive | No |
| eu rohs | compliant |
| lead shape | Gull-wing |
| maximum operating temperature (°c) | 150 |
| mounting | surface mount |
| part status | NRND |
| pcb changed | 3 |
| standard package name | SOT |
| supplier package | SOT-23 |
| eccn (us) | ear99 |
| maximum power dissipation (mw) | 350 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| factory pack quantity: factory pack quantity: | 3000 |
| manufacturer: | Vishay |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | SMD/SMT |
| product category: | MOSFET |
| product type: | MOSFET |
| series: | 2N7002E |
| subcategory: | MOSFETs |
| packaging: | Reel, Cut Tape, MouseReel |
| part # aliases: | 2N7002E-E3 |
| number of channels | 1 Channel |
| hts | 8541.29.00.95 |
| package height | 1.02(Max) |
| package length | 3.04(Max) |
| package width | 1.4(Max) |
| Вес и габариты | |
| package/case: | SOT-23-3 |
| number of elements per chip | 1 |
| channel type | N |
| pd - power dissipation: | 350 mW |
| part # aliases | 2N7002E-E3 |
| technology | Si |
| number of channels: | 1 Channel |
| pd - power dissipation | 350 mW |
| technology: | Si |
| configuration: | Single |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 0.24 |
| maximum drain source resistance (mohm) | 3000@10V |
| maximum drain source voltage (v) | 60 |
| maximum gate source voltage (v) | ±20 |
| typical gate charge @ vgs (nc) | 0.4@4.5V |
| typical input capacitance @ vds (pf) | 21@5V |
| military | No |
| rds on - drain-source resistance | 3 Ohms |
| transistor polarity | N-Channel |
| vds - drain-source breakdown voltage | 60 V |
| vgs - gate-source voltage | 4.5 V |
| id - continuous drain current | 240 mA |
| typical turn-on delay time | 13 ns |
| typical turn-off delay time | 18 ns |
| forward transconductance - min | 600 mS |
| qg - gate charge | 0.6 nC |
| transistor type | 1 N-Channel |
| vgs th - gate-source threshold voltage | 1 V |
| channel mode: | Enhancement |
| id - continuous drain current: | 240 mA |
| qg - gate charge: | 600 pC |
| rds on - drain-source resistance: | 3 Ohms |
| transistor polarity: | N-Channel |
| transistor type: | 1 N-Channel |
| vds - drain-source breakdown voltage: | 60 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage: | 1 V |
| typical turn-off delay time: | 18 ns |
| typical turn-on delay time: | 13 ns |
| forward transconductance - min: | 600 mS |
