IXFX20N120P, Транзистор: N-MOSFET, Polar™, полевой, 1,2кВ, 20А, 780Вт, PLUS247™

Оставить отзыв
В избранноеВ сравнение
Артикул: IXFX20N120P
Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N THTN-Channel 1200V 20A (Tc) 780W (Tc) Through Hole PLUS247в„ў-3
Основные
вес, г6
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
5 160
+
Бонус: 103.2 !
Бонусная программа
Итого: 5 160
Купить
  • Обзор
  • Характеристики
  • Отзывы (0)
  • Реквизиты
Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N THTN-Channel 1200V 20A (Tc) 780W (Tc) Through Hole PLUS247в„ў-3
Основные
вес, г6
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
packageTube
package / caseTO-247-3
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Unaffected
supplier device packagePLUS247в„ў-3
california prop 65Warning Information
seriesHiPerFETв„ў, PolarP2в„ў ->
factory pack quantity: factory pack quantity:30
manufacturer:IXYS
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:Through Hole
product category:MOSFET
product type:MOSFET
series:IXFX20N120
subcategory:MOSFETs
packaging:Tube
Вес и габариты
package/case:TO-247-3
tradename:HiPerFET
pd - power dissipation:780 W
technologyMOSFET (Metal Oxide)
number of channels:1 Channel
technology:Si
configuration:Single
current - continuous drain (id) @ 25в°c20A (Tc)
drain to source voltage (vdss)1200V
drive voltage (max rds on, min rds on)10V
fet typeN-Channel
gate charge (qg) (max) @ vgs193nC @ 10V
input capacitance (ciss) (max) @ vds11100pF @ 25V
power dissipation (max)780W (Tc)
rds on (max) @ id, vgs570mOhm @ 10A, 10V
vgs (max)В±30V
vgs(th) (max) @ id6.5V @ 1mA
channel mode:Enhancement
id - continuous drain current:20 A
qg - gate charge:193 nC
rds on - drain-source resistance:570 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:1.2 kV
vgs - gate-source voltage:-30 V, +30 V
vgs th - gate-source threshold voltage:3.5 V
typical turn-off delay time:72 ns
typical turn-on delay time:49 ns
fall time:70 ns
rise time:45 ns
Отзывов нет
Меню
0Корзина
Товар добавлен в корзину!
Товар добавлен в список сравнения
Товар добавлен в список избранных
Профиль