Discrete Semiconductor Products\Transistors - FETs, MOSFETs - ArraysMosfet Array 2 N-Channel (Dual) 30 В 5,7 А 1,8 Вт для поверхностного монтажа 8-SO

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	5.7A
drain to source voltage (vdss)	30V
eccn	EAR99

220 ₽

– +

Бонус: 4.4 !

Бонусная программа

Итого: 220 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - ArraysMosfet Array 2 N-Channel (Dual) 30 В 5,7 А 1,8 Вт для поверхностного монтажа 8-SO

Вес и габариты
current - continuous drain (id) @ 25в°c	5.7A
drain to source voltage (vdss)	30V
eccn	EAR99
fet feature	Logic Level Gate
fet type	2 N-Channel (Dual)
gate charge (qg) (max) @ vgs	12.9nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	608pF @ 15V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Cut Tape (CT)Digi-Ree
package / case	8-SOIC (0.154"", 3.90mm Width)
power - max	1.8W
rds on (max) @ id, vgs	24mOhm @ 7A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	8-SO
vgs(th) (max) @ id	3V @ 250ВµA

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