Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 36A (Tc) 150W (Tc) сквозное отверстие TO-247-3

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube

5 130 ₽

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Бонус: 102.6 !

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Итого: 5 130 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 36A (Tc) 150W (Tc) сквозное отверстие TO-247-3

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-247-3
series	Automotive, AEC-Q101 ->
Вес и габариты
technology	GaNFET (Cascode Gallium Nitride FET)
current - continuous drain (id) @ 25в°c	36A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	24nC @ 10V
input capacitance (ciss) (max) @ vds	1000pF @ 400V
power dissipation (max)	150W (Tc)
rds on (max) @ id, vgs	60mOhm @ 25A, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4.8V @ 700ВµA

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