STW36N55M5, Trans MOSFET N-CH 550V 33A 3-Pin(3+Tab) TO-247 Tube

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Артикул: STW36N55M5
Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 550V 33A, 3-контактный (3 выступа), трубка TO-247
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature150В°C (TJ)
packageTube
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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 550V 33A, 3-контактный (3 выступа), трубка TO-247
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature150В°C (TJ)
packageTube
package / caseTO-247-3
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Unaffected
supplier device packageTO-247
pin count3
packagingTube
product categoryPower MOSFET
seriesMDmeshв„ў V ->
automotiveNo
eu rohsCompliant with Exemption
lead shapeThrough Hole
maximum operating temperature (°c)150
mountingThrough Hole
part statusObsolete
pcb changed3
ppapNo
standard package nameTO-247
supplier packageTO-247
base product numberSTW36N ->
eccn (us)EAR99
maximum power dissipation (mw)190000
minimum operating temperature (°c)-55
configurationSingle
process technologyMDmesh
Вес и габариты
number of elements per chip1
channel typeN
technologyMOSFET (Metal Oxide)
other related documentshttp://www.st.com/web/catalog/sense_power/FM100/CL
tabTab
channel modeEnhancement
maximum continuous drain current (a)33
maximum drain source resistance (mohm)80 10V
maximum drain source voltage (v)550
maximum gate source leakage current (na)100
maximum gate source voltage (v)±25
maximum gate threshold voltage (v)5
maximum idss (ua)1
typical gate charge @ 10v (nc)62
typical gate charge @ vgs (nc)62 10V
typical input capacitance @ vds (pf)2950 100V
current - continuous drain (id) @ 25в°c33A (Tc)
drain to source voltage (vdss)550V
drive voltage (max rds on, min rds on)10V
fet typeN-Channel
gate charge (qg) (max) @ vgs62nC @ 10V
input capacitance (ciss) (max) @ vds2950pF @ 100V
power dissipation (max)190W (Tc)
rds on (max) @ id, vgs80mOhm @ 16.5A, 10V
vgs (max)В±25V
vgs(th) (max) @ id5V @ 250ВµA
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